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Samsung is expected to more than double output of its HBM4 and HBM4E DRAM
Summary
Samsung plans to more than double its HBM4 and HBM4E output next year, raising glass‑carrier cleaning to 50 k sheets/month and wafer input to ~250 k per month. The HBM4 family’s share of shipments is expected to jump from ~40 % to ~80 % as the higher‑layer HBM4E ramps up.
- Samsung will increase glass carrier cleaning to 50,000 sheets/month to support HBM4/HBM4E scaling.
- HBM4/HBM4E output is expected to more than double, with wafer input rising ~40% to 250k wafers next year.
- HBM4's share of shipments should grow from ~40% to ~80% as HBM4E mass production ramps up.
- HBM4 uses 10nm-class DRAM and a 4nm base die; HBM4E samples have been shipped to Nvidia.
GPU designers and data‑center engineers should track HBM supply trends because they affect high‑performance compute capacity.
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